With the Pt contacts. 16 Protocol Figure S1: (a) The intensity ATP disodium Purity distribution around 1010 GaN Bragg reflection of three diverse free-lying GaN NWs with diameters of 350 nm. (d) The exact same Bragg peaks from a unique view perpendicular towards the [0001] crystallographic direction. The figures demonstrate absence of the “double-star” structure,Appl. Sci. 2021, 11,10 ofwhich was observed in the case of bent GaN NWs. Figure S2: (a,b) The intensity distribution around 1010 GaN Bragg peak of two free-lying GaN NWs with diameters of 200 nm. (c,d) A distinct view of these Bragg peaks from a path perpendicular to the [0001] crystallographic axis. The Bragg peaks demonstrate the “double-star” structure standard for the bent GaN NWs. Figure S3: SEM photos from the contacted GaN NWs. The very first 350 nm GaN NW just before (a) and following (b) applied voltage bias. The second 350 nm GaN NW just before (c) and following (b) the maximum applied voltage. The 200 nm GaN NW just before (e) and after (f) the applied voltage bias. Figure S4: SEM pictures of the second kind of Au contacts. The NW with the diameter of 200 nm contacted on the top on the Au electrodes by melting procedure prior to (a) and soon after (b) applied 0.1 V of bias. (c) The 350 nm GaN NW around the top rated of Au contacts. Figure S5: Evolution of the intensity distribution around 1010 GaN Bragg reflection in the second contacted GaN NW with all the diameter of 350 nm. The values with the applied voltage bias: 0 V (a), 1 V (b), 2 V (c), 5 V (d). Figure S6: Dependence on the scattering vector modulus (H1010) around the applied voltage bias for the first (a) and second (b) 350 nm GaN NW. Comparable dependence with the scattering vector modulus (H1010) around the applied voltage bias for the initial (c) and second (d) 200 nm GaN NW. Figure S7: Dependence in the bending angle for the first (a) and second (b) GaN NW using the diameter of 200 nm on the applied voltage bias. Figure S8: SEM images of the Pt contacted 200 nm GaN NWs. Figure S9: (a) SEM images from the Pt contacted GaN NW with diameter of 200 nm. (b) Comparison on the diffracted intensity of the 1010 GaN Bragg reflection of the NW prior to (up) and following (bottom) deposition from the Pt contacts. (c) 3D intensity distribution around 1010 GaN Bragg reflection on the NW. Author Contributions: Conceptualization and methodology, S.L. and I.A.V.; sample preparation, Z.B., A.N., A.M., and L.S.; sample characterization, A.J. and T.F.K.; X-ray experiment, S.L., Y.Y.K., L.G., I.A.Z., R.K., D.D., M.S., and I.A.V.; data evaluation, S.L., Y.Y.K., and D.D.; writing–review and editing, S.L. and I.A.V. All authors have study and agreed towards the published version of the manuscript. Funding: This analysis was funded by the Helmholtz Associations Initiative Networking Fund (Grant No. HRSF-0002) and also the Russian Science Foundation (Grant No. 181-06001); Sergey Lazarev was funded by the Competitiveness Enhancement Program Grant of Tomsk Polytechnic University as well as the Governmental plan “Science,” project no. FSWW-2020-0014. Data Availability Statement: The data presented in this study are openly available in Zenodo.org at https://zenodo.org/record/5520539#.YUshJ44zaF4 at doi:ten.5281/zenodo.5520539, reference quantity [28]. Acknowledgments: We acknowledge DESY (Hamburg, Germany), a member of your Helmholtz Association HGF, for the provision of experimental facilities. Components of this investigation had been carried out at PETRA III and DESY NanoLab and we would prefer to thank the beamline staff for help in utilizing coherence applications beamline.